Silicon Impulse program adds partners to ease industrialisation of ultra-low power IC designs based on FD-SOI processes
Intel 14nm finFET SoC process is among the highlights of the 2015 VLSI Symposia alongside research that looks at the integration of III-V and 2D materials for future processes.
CEA-Leti has launched a design center called Silicon Impulse with the intention of lowering the entry barrier to using the FD-SOI process.
The FD-SOI technology developed by CEA-Leti and STMicroelectronics is beginning to gain ground as chipmakers investigate the process as a way to deliver low-energy, wireless-capable SoCs.
As plans crystallize to take FD-SOI down to 10nm, CEA-Leti argues that the technology can provide an alternative path to that of finFETs to get to 7nm processes and beyond.
At IEDM 2014, CEA-Leti presented a technique that prevents damage to base-layer transistors in monolithic 3DIC processes. As work progresses, the institute is preparing to receive 3DIC designs in 2017.
Process development alliance will enable Imec to experiment on 10 and 7nm processes in the computer before moving to the fab
EUV may be getting most R&D cash but the world's biggest foundry says e-beam currently has the edge on defects and double patterning.
Despite the swirl of interest in the internet of things progress is likely to be held back by interoperability issues according to speakers at the recent NI Week conference.
Technology from advanced-physics research institute CERN will form part of National Instruments' long-term strategy to improve the ability of distributed systems to support real-time control.
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