Ferroelectric memory moves closer with VLSI experiments
Ferroelectric memory may be able to stage a comeback thanks to materials innovations as work presented at VLSI Symposium have shown, though there is still plenty to do.
Georgia Tech
Oxide DRAM gains traction at VLSI Symposium
VLSI Symposium 2022 will show the rapid development taking place in oxide-based replacements for traditional DRAM cells as well as the emerging area of memory-based low-power machine learning.
Copper’s future is troubled but it’s likely to stick around
The metal has done sterling service for 20 years but the time is approaching to find a replacement for copper as problems with parasitics continue to build up, work presented at last month’s IEDM shows. But it's not an obvious switch.
Backside metal defends against IR drop and side-channel attacks
Work presented at IEDM 2020 shows taking advantage of the IC backside for power and ground for the additional area can deliver further benefits for IR drop and security.
2D tools adapt to create smaller monolithic 3DIC designs
Researchers at the Georgia Institute of Technology adapted conventional 2D layout tools to a two-layer monolithic 3D process that resulted in sizeable space and power savings.
3D-IC cooling ascends the agenda
US defense research agency DARPA sets targets for cooling overall systems and hot spots in stacked silicon, and backs joint research from Rockwell-Collins and Georgia Tech.
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