Georgia Tech


July 20, 2023

Ferroelectric memory moves closer with VLSI experiments

Ferroelectric memory may be able to stage a comeback thanks to materials innovations as work presented at VLSI Symposium have shown, though there is still plenty to do.
June 1, 2022

Oxide DRAM gains traction at VLSI Symposium

VLSI Symposium 2022 will show the rapid development taking place in oxide-based replacements for traditional DRAM cells as well as the emerging area of memory-based low-power machine learning.
January 15, 2021

Copper’s future is troubled but it’s likely to stick around

The metal has done sterling service for 20 years but the time is approaching to find a replacement for copper as problems with parasitics continue to build up, work presented at last month’s IEDM shows. But it's not an obvious switch.
Article  |  Topics: Blog - EDA  |  Tags: , , , , , ,   |  Organizations: , , , ,
December 18, 2020

Backside metal defends against IR drop and side-channel attacks

Work presented at IEDM 2020 shows taking advantage of the IC backside for power and ground for the additional area can deliver further benefits for IR drop and security.
June 9, 2016

2D tools adapt to create smaller monolithic 3DIC designs

Researchers at the Georgia Institute of Technology adapted conventional 2D layout tools to a two-layer monolithic 3D process that resulted in sizeable space and power savings.
Article  |  Topics: Blog - EDA, IP  |  Tags: , , , ,   |  Organizations:
April 10, 2013

3D-IC cooling ascends the agenda

US defense research agency DARPA sets targets for cooling overall systems and hot spots in stacked silicon, and backs joint research from Rockwell-Collins and Georgia Tech.
Article  |  Topics: Design to Silicon, Blog - EDA  |  Tags: ,   |  Organizations: , ,

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