Technology from advanced-physics research institute CERN will form part of National Instruments' long-term strategy to improve the ability of distributed systems to support real-time control.
At the VLSI Technology Symposium a team led by STMicroelectronics described the techniques used for the upcoming 14nm FD-SOI to boost speed and density over the 28nm version.
The 2013 edition of the International Technology Roadmap for Semiconductors has been published. The latest set of tables underlines the slowdown in some aspects of scaling, particularly when it comes to metal interconnect.
Power converters are arriving on the market with the aim of simplifying the job of building energy-harvesting systems for wireless sensor nodes and the Internet of Things.
IMEC's Rudy Lauwereins explained at DATE 2014 how 1D routing for self-aligned multiple patterning is likely to be inevitable even if EUV makes it into production fabs.
What's in a millisecond? The difference between today's embedded systems and tomorrow's, Professor Gerhard Fettweis of TU of Dresden said at DATE 2014.
FinFETs for 7nm and below processes will be able to integrate high-mobility III-V materials despite being built on silicon processes, thanks to recent work by imec.
Research group CEA-Leti expects to have design kits ready for a 10nm FD-SOI process in June 2014
CMOS approaches are likely to underpin electronics for the next century, according to Chenming Hu, father of the finFET
US defense research agency DARPA sets targets for cooling overall systems and hot spots in stacked silicon, and backs joint research from Rockwell-Collins and Georgia Tech.
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