Different forms of heterogeneous integration take center stage at the IEEE International Electron Device Meeting (IEDM) in December this year.
There's still plenty of time to build a busy and profitable agenda for a visit to ES Design West and SEMICON West in San Francisco next week.
Embedded magnetic RAM is emerging as a contender for on-chip memory not just from a density standpoint but from that of power.
CMOS moving to 3nm and DRAM going beyond 20nm scaling are two of the late papers at the upcoming IEDM and part of a larger examination of semiconductor trends.
Imec proposes using stacked CMOS transistors and buried power rails to improve density for the 3nm process node.
Imec will at this week’s VLSI Symposia describe how it fabricated a form of magnetic memory suitable for use as a non-volatile cache onto 300mm wafers using CMOS-compatible processes.
Imec and Unisantis Electronics have developed a process flow based on a vertical transistor with a gate on all sides they claim will lead to denser memories on a 5nm node.
The circuits sessions at mid-June's VLSI Symposia in Honolulu feature a number of papers that improve the performance of scaled mixed-signal processes.
Samsung Electronics will describe at the upcoming VLSI Symposia how its engineers have applied EUV to a variety of layers in a 7nm finFET process.
Cadence and Imec have worked together on a project to tape out a test chip to explore manufacturing and design-rule options for the interconnect on future 3nm processes.
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