MRAM pushes speed and endurance at IEDM
IEDM late last year showed how MRAM is being prepared for both FD-SOI and advanced finFET nodes.
Samsung Electronics
Mentor delivers eMRAM test for ARM/Samsung FDSOI at 28nm
Tessent test suite targets automotive, AI and IoT projects that need embedded non-volatile memory.
South Korea-Japan tensions continue to threaten memory supply chain
Concerns that the diplomatic stand-off between Seoul and Tokyo could hit the supply chain rose again this weekend as South Korean politicians made a surprise visit to disputed islands.
Symphony raises crescendo for AMS simulation
Mentor's updated AMS platform claims performance boost by obviating 'legacy' technology.
IEDM to examine scaling from multiple directions
CMOS moving to 3nm and DRAM going beyond 20nm scaling are two of the late papers at the upcoming IEDM and part of a larger examination of semiconductor trends.
Verification engineers embrace emulation for the shift left
In a panel session at June's DAC, Synopsys customers talked about some of the ways they make verification more efficient and bring technologies such as formal, emulation, and simulation together.
Node-variant FinFET tweaks try to improve cost, performance
Foundries have taken aim at standard-cell track height and design-rule tweaks to try to improve the area efficiency and performance of derivative finFET processes.
Samsung couples EUV with DTCO for 7nm shrink
Samsung Electronics expects to increase savings on die area in the shift from its 10nm to 7nm node by applying both EUV for critical layers and several layout-focused process changes.
7nm process with EUV to feature at VLSI
Samsung Electronics will describe at the upcoming VLSI Symposia how its engineers have applied EUV to a variety of layers in a 7nm finFET process.
User2User Silicon Valley rolls out later this month
Mentor's west coast user conference will take place in Santa Clara on May 15. Attendance is free-of-charge.
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