Samsung Electronics

June 16, 2021

Samsung moves further into 3D for denser flash

Samsung described at VLSI Symposia how it has used two further forms of stacking to increase flash capacity.
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January 15, 2021

Copper’s future is troubled but it’s likely to stick around

The metal has done sterling service for 20 years but the time is approaching to find a replacement for copper as problems with parasitics continue to build up, work presented at last month’s IEDM shows. But it's not an obvious switch.
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January 10, 2020

MRAM pushes speed and endurance at IEDM

IEDM late last year showed how MRAM is being prepared for both FD-SOI and advanced finFET nodes.
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December 16, 2019

Mentor delivers eMRAM test for ARM/Samsung FDSOI at 28nm

Tessent test suite targets automotive, AI and IoT projects that need embedded non-volatile memory.
September 2, 2019

South Korea-Japan tensions continue to threaten memory supply chain

Concerns that the diplomatic stand-off between Seoul and Tokyo could hit the supply chain rose again this weekend as South Korean politicians made a surprise visit to disputed islands.
November 7, 2018

Symphony raises crescendo for AMS simulation

Mentor's updated AMS platform claims performance boost by obviating 'legacy' technology.
October 22, 2018

IEDM to examine scaling from multiple directions

CMOS moving to 3nm and DRAM going beyond 20nm scaling are two of the late papers at the upcoming IEDM and part of a larger examination of semiconductor trends.
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July 27, 2018

Verification engineers embrace emulation for the shift left

In a panel session at June's DAC, Synopsys customers talked about some of the ways they make verification more efficient and bring technologies such as formal, emulation, and simulation together.
June 25, 2018

Node-variant FinFET tweaks try to improve cost, performance

Foundries have taken aim at standard-cell track height and design-rule tweaks to try to improve the area efficiency and performance of derivative finFET processes.
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June 21, 2018

Samsung couples EUV with DTCO for 7nm shrink

Samsung Electronics expects to increase savings on die area in the shift from its 10nm to 7nm node by applying both EUV for critical layers and several layout-focused process changes.
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