January 15, 2021
The metal has done sterling service for 20 years but the time is approaching to find a replacement for copper as problems with parasitics continue to build up, work presented at last month’s IEDM shows. But it's not an obvious switch.
January 10, 2020
IEDM late last year showed how MRAM is being prepared for both FD-SOI and advanced finFET nodes.
December 16, 2019
Tessent test suite targets automotive, AI and IoT projects that need embedded non-volatile memory.
September 2, 2019
Concerns that the diplomatic stand-off between Seoul and Tokyo could hit the supply chain rose again this weekend as South Korean politicians made a surprise visit to disputed islands.
November 7, 2018
Mentor's updated AMS platform claims performance boost by obviating 'legacy' technology.
October 22, 2018
CMOS moving to 3nm and DRAM going beyond 20nm scaling are two of the late papers at the upcoming IEDM and part of a larger examination of semiconductor trends.
July 27, 2018
In a panel session at June's DAC, Synopsys customers talked about some of the ways they make verification more efficient and bring technologies such as formal, emulation, and simulation together.
June 25, 2018
Foundries have taken aim at standard-cell track height and design-rule tweaks to try to improve the area efficiency and performance of derivative finFET processes.
June 21, 2018
Samsung Electronics expects to increase savings on die area in the shift from its 10nm to 7nm node by applying both EUV for critical layers and several layout-focused process changes.
May 4, 2018
Samsung Electronics will describe at the upcoming VLSI Symposia how its engineers have applied EUV to a variety of layers in a 7nm finFET process.
