GaN

At IEDM, TSMC is at the top of several papers that examine how 2D materials might be put into action as successors to silicon, alongside work from a variety of institutions on power integration and thermal management.

Adaptive power-aware clocking and buried rails are among the techniques to be explored at the 2020 VLSI Symposia.

At the 62nd annual IEDM taking place in early December two of the leading groups in process development will take the wraps off their 7nm finFET technologies.

Researchers describe at IEDM 2015 how they are making gallium nitride fit into a wider range of power-handling applications and may even result in mass-market vertical transistors.

Intel 14nm finFET SoC process is among the highlights of the 2015 VLSI Symposia alongside research that looks at the integration of III-V and 2D materials for future processes.

High peak-to-average ratios inherent in 4G/5G modulation schemes are driving the circuitry controlling RF PAs to become more modeling-oriented.

In the world of power semiconductors, not many companies try to go fabless. The tradeoffs between design and process offer many more options for system-level design, argued Infineon's Reinhard Ploss at the ISS Europe conference.