finFET

TSMC is developing processes for high-end automotive and RF based off its N5 and N7 families.

Imec's senior vice president of CMOS outlined future directions for the technology over the coming decade.

TSMC is using its growing experience with EUV lithography to fill in sub-nodes between its major releases as it prepares to extend finFET technology to the forthcoming N3 process.

Adaptive power-aware clocking and buried rails are among the techniques to be explored at the 2020 VLSI Symposia.

GlobalFoundries is calling for imports of chips fabbed by TSMC into the US and Germany in multiple actions based on a list of 16 patents.

Graphcore has licensed IP from Belgium-based Sofics to protect its Colossus GC2 processors from ESD.

GlobalFoundries has decided to put development of its 7nm process on the backburner and focus on its existing finFET and FD-SOI processes.

Foundries have taken aim at standard-cell track height and design-rule tweaks to try to improve the area efficiency and performance of derivative finFET processes.

Samsung Electronics expects to increase savings on die area in the shift from its 10nm to 7nm node by applying both EUV for critical layers and several layout-focused process changes.

Researchers from the UC Berkeley and Intel teamed up to develop an energy-tuneable RF front-end on a digital finFET process with no need for analog process options.