Oxygen injection for go-faster 14nm transistors
Mears Technologies and UC Berkeley describe at IEDM 2012 how oxygen in a silicon superlattice could boost performance beyond strained silicon at 14nm.
Research Groups
Germanium finFETs, TFETs and MEMS modelled at IEDM
The modelling track at IEDM 2012 showed how germanium could be used in 14nm finFETs. Other work focused on tunnel FETs and analyzing MEMS using Spice.
EDA and IP vendors roll out support for TSMC’s 20nm, 3DIC processes
IP and EDA vendors line up to support TSMC 20nm process, CoWoS 3DIC technology
IEF: Process kits for processes that don’t yet exist
Designers should plan ahead for future process changes as conventional silicon CMOS runs out of steam, IMEC's Rudy Lauwereins told delegates at the International Electronics Forum in Bratislava this week.
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