post-finFET


August 25, 2020

TSMC fills in sub-nodes as EUV gains ground

TSMC is using its growing experience with EUV lithography to fill in sub-nodes between its major releases as it prepares to extend finFET technology to the forthcoming N3 process.
Article  |  Topics: Blog - EDA, IP  |  Tags: , , , , , , ,   |  Organizations: ,
June 16, 2020

Transistor stacks piled high at VLSI

As 2D scaling becomes increasingly difficult, researchers reporting at VLSI Symposia have focused attention on what can be done in the third dimensions to improve density and performance without a sudden break from conventional CMOS processes.
Article  |  Topics: Blog - EDA  |  Tags: , , , , , , , , , ,   |  Organizations: ,
August 16, 2018

IBM and Synopsys to apply DTCO to post-finFET process development

Collaboration on DTCO offers IBM a better way to evaluate combinations of transistor architectures, materials and other process technology innovations using design metrics, before real wafers become available for physical experimentation.

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