Imec's senior vice president of CMOS outlined future directions for the technology over the coming decade.
This year's IEDM will feature papers that exploit stacked nanoribbons to reduce CMOS footprint, graphene interconnects that support easier integration, and the variability prospects of 2D semiconductors.
TSMC is using its growing experience with EUV lithography to fill in sub-nodes between its major releases as it prepares to extend finFET technology to the forthcoming N3 process.
As 2D scaling becomes increasingly difficult, researchers reporting at VLSI Symposia have focused attention on what can be done in the third dimensions to improve density and performance without a sudden break from conventional CMOS processes.
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