nanosheet

February 22, 2024

Cadence to work on IP for Intel 18A

Cadence has agreed to work with Intel Foundry Services on IP and flows for the 18A process, which will include backside power delivery and nanosheet transistors.
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October 5, 2023

Vertical integration expands at IEDM

Vertical integration is one of the major focus areas at the upcoming IEDM conference, both in terms of transistors and the multiple channels that will go into them.
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April 13, 2023

Arm signs sub-2nm deal with Intel foundry operation

Intel Foundry Services has signed a deal with Arm that will see the two companies work on a program of system and design-technology co-optimization.
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October 17, 2022

2D advances to take center stage at IEDM

At IEDM, TSMC is at the top of several papers that examine how 2D materials might be put into action as successors to silicon, alongside work from a variety of institutions on power integration and thermal management.
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October 18, 2021

Three ways to 3D feature at IEDM

Three highlighted papers at IEDM, taking place in December, show the different approaches to the use of the vertical dimension to cut energy use and improve density.
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June 15, 2021

Imec cuts transistor gap to less than 20nm with forksheets

Imec showed at VLSI Symposia a process flow that can cut the gap between complementary transistors to less than 20nm.
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May 2, 2021

Alternative scaling approaches form VLSI 2021 technology highlights

The upcoming VLSI Symposia will feature a number of papers that show the ways in which novel approaches are going to be needed to continue scaling.
December 15, 2020

Chipmaking’s new environment presented at IEDM

Imec's senior vice president of CMOS outlined future directions for the technology over the coming decade.
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November 9, 2020

IEDM 2020 highlights transistor and interconnect advances

This year's IEDM will feature papers that exploit stacked nanoribbons to reduce CMOS footprint, graphene interconnects that support easier integration, and the variability prospects of 2D semiconductors.
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August 25, 2020

TSMC fills in sub-nodes as EUV gains ground

TSMC is using its growing experience with EUV lithography to fill in sub-nodes between its major releases as it prepares to extend finFET technology to the forthcoming N3 process.
Article  |  Topics: Blog - EDA, IP  |  Tags: , , , , , , ,   |  Organizations: ,

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