IEDM late last year showed how MRAM is being prepared for both FD-SOI and advanced finFET nodes.
Different forms of heterogeneous integration take center stage at the IEEE International Electron Device Meeting (IEDM) in December this year.
Non-volatile alternatives to flash are finally moving out of the lab as Applied Materials launches production tools and Arm starts pushing MRAM.
Embedded magnetic RAM is emerging as a contender for on-chip memory not just from a density standpoint but from that of power.
CMOS moving to 3nm and DRAM going beyond 20nm scaling are two of the late papers at the upcoming IEDM and part of a larger examination of semiconductor trends.
FD-SOI is gradually building up a presence as a technology not just for low-power but RF and power integration.
Imec will at this week’s VLSI Symposia describe how it fabricated a form of magnetic memory suitable for use as a non-volatile cache onto 300mm wafers using CMOS-compatible processes.
GlobalFoundries intends to offer a 12nm FinFET process as a stepping stone from its 14nm process.
GlobalFoundries has introduced an embedded-MRAM option for its 22nm FD-SOI process: the 22FDX platform.
As plans crystallize to take FD-SOI down to 10nm, CEA-Leti argues that the technology can provide an alternative path to that of finFETs to get to 7nm processes and beyond.
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