DRAM


December 5, 2022

Imec pushes endurance on ferro memory at IEDM

Imec has developed a high-endurance ferroelectric capacitor that could form the basis of storag-class embedded and standalone memories.
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June 1, 2022

Oxide DRAM gains traction at VLSI Symposium

VLSI Symposium 2022 will show the rapid development taking place in oxide-based replacements for traditional DRAM cells as well as the emerging area of memory-based low-power machine learning.
May 20, 2021

Denser DRAM looks to flash for inspiration

Unisantis aims to use its vertical transistor design in a novel form of DRAM that could improve density four-fold.
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September 2, 2019

South Korea-Japan tensions continue to threaten memory supply chain

Concerns that the diplomatic stand-off between Seoul and Tokyo could hit the supply chain rose again this weekend as South Korean politicians made a surprise visit to disputed islands.
October 22, 2018

IEDM to examine scaling from multiple directions

CMOS moving to 3nm and DRAM going beyond 20nm scaling are two of the late papers at the upcoming IEDM and part of a larger examination of semiconductor trends.
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June 20, 2018

Micron sees NAND powering on as DRAM struggles

Despite the intense R&D going into storage-class and other novel forms of non-volatile memories, flash is set to continue as the bulk memory of choice, Micron executive claims in VLSI Symposia keynote.
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March 1, 2016

Mentor builds out verification IP for memory

About 1,600 new UVM System Verilog verification IP memory models will cut testbench development time and offer more time to increase coverage.
June 23, 2015

Sonics updates tune memory and link width for speed and power

The latest release of the SonicsGN NoC infrastructure provides speedups for multichannel memories.
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February 8, 2012

ITRS update goes online

The wait is over for the latest edition of the International Technology Roadmap for Semiconductors (ITRS).
Article  |  Topics: Commentary, Blog - EDA  |  Tags: , , ,

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