Imec pushes endurance on ferro memory at IEDM
Imec has developed a high-endurance ferroelectric capacitor that could form the basis of storag-class embedded and standalone memories.
DRAM
Oxide DRAM gains traction at VLSI Symposium
VLSI Symposium 2022 will show the rapid development taking place in oxide-based replacements for traditional DRAM cells as well as the emerging area of memory-based low-power machine learning.
Denser DRAM looks to flash for inspiration
Unisantis aims to use its vertical transistor design in a novel form of DRAM that could improve density four-fold.
South Korea-Japan tensions continue to threaten memory supply chain
Concerns that the diplomatic stand-off between Seoul and Tokyo could hit the supply chain rose again this weekend as South Korean politicians made a surprise visit to disputed islands.
IEDM to examine scaling from multiple directions
CMOS moving to 3nm and DRAM going beyond 20nm scaling are two of the late papers at the upcoming IEDM and part of a larger examination of semiconductor trends.
Micron sees NAND powering on as DRAM struggles
Despite the intense R&D going into storage-class and other novel forms of non-volatile memories, flash is set to continue as the bulk memory of choice, Micron executive claims in VLSI Symposia keynote.
Mentor builds out verification IP for memory
About 1,600 new UVM System Verilog verification IP memory models will cut testbench development time and offer more time to increase coverage.
Sonics updates tune memory and link width for speed and power
The latest release of the SonicsGN NoC infrastructure provides speedups for multichannel memories.
ITRS update goes online
The wait is over for the latest edition of the International Technology Roadmap for Semiconductors (ITRS).
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