Imec showed at VLSI Symposia a process flow that can cut the gap between complementary transistors to less than 20nm.
IEDM late last year showed how MRAM is being prepared for both FD-SOI and advanced finFET nodes.
Different forms of heterogeneous integration take center stage at the IEEE International Electron Device Meeting (IEDM) in December this year.
IEDM plans to expand its range of coverage for the 2019 event to encompass a range of novel computing platforms, from neuromorphic architectures to machines that emulate thermodynamic systems.
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