Conference

A leading researcher argues that graphene will not replace but complement silicon and thrive in specialist applications.

The one-day conference series features the latest innovations from many verification vendors in separate UK, France and Germany editions.

TSMC 16nm finFET process and efforts to increase p-finFET mobility using germanium to be detailed at December's International Electron Devices Meeting.

It's time to act if you want your semiconductor device or process research to be considered for presentation at IEDM 2013 in Washington DC this December.

Can planar devices on fully depleted SOI resist the relentless rise of finFETs as the next device architecture of choice for the semiconductor industry? An evening panel at IEDM explored the trade-offs

Semiconductor process options outlined at IEDM by Luc van den Hove of imec as industry faces hard choices and rising costs

The modelling track at IEDM 2012 showed how germanium could be used in 14nm finFETs. Other work focused on tunnel FETs and analyzing MEMS using Spice.

finFETs are vital to the next generation of CMOS processes from Intel, TSMC and others. How will process issues including bulk vs SOI substrates, density limitations, thickness control, and planar device integration affect their practical implementation?

Ambipolar FETs, which can be n or p-type dependent on a control gate, could offer a new way to design circuits at 20nm and below.

Advanced SOI devices with hybrid channel materials may challenge the finFET's future dominance, says IBM