germanium

October 1, 2013

TSMC 16nm finFET, Ge 20nm p-finFET set for IEDM

TSMC 16nm finFET process and efforts to increase p-finFET mobility using germanium to be detailed at December's International Electron Devices Meeting.

Article | Topics: Conferences, Design to Silicon | Tags: 16nm, device architecture, Device structures, finFET, germanium, IEDM 2013 | Organizations: IEDM, TSMC

December 10, 2012

Germanium finFETs, TFETs and MEMS modelled at IEDM

The modelling track at IEDM 2012 showed how germanium could be used in 14nm finFETs. Other work focused on tunnel FETs and analyzing MEMS using Spice.