At the VLSI Technology Symposium a team led by STMicroelectronics described the techniques used for the upcoming 14nm FD-SOI to boost speed and density over the 28nm version.
STMicroelectronics pushes on with FDSOI despite dissolution of ST-Ericcson joint venture that provided the lead customer for the process.
Mears Technologies and UC Berkeley describe at IEDM 2012 how oxygen in a silicon superlattice could boost performance beyond strained silicon at 14nm.
The modelling track at IEDM 2012 showed how germanium could be used in 14nm finFETs. Other work focused on tunnel FETs and analyzing MEMS using Spice.
Advanced SOI devices with hybrid channel materials may challenge the finFET's future dominance, says IBM
Texas Instruments had good news for teams that want to assemble 3DIC stacks using thru-silicon vias (TSVs). The stress induced by the copper TSVs is not as bad as many feared for nanometer-scale transistors.
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