Can planar devices on fully depleted SOI resist the relentless rise of finFETs as the next device architecture of choice for the semiconductor industry? An evening panel at IEDM explored the trade-offs
finFETs are vital to the next generation of CMOS processes from Intel, TSMC and others. How will process issues including bulk vs SOI substrates, density limitations, thickness control, and planar device integration affect their practical implementation?
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