device architecture


October 1, 2013

TSMC 16nm finFET, Ge 20nm p-finFET set for IEDM

TSMC 16nm finFET process and efforts to increase p-finFET mobility using germanium to be detailed at December's International Electron Devices Meeting.
Article  |  Topics: Conferences, Design to Silicon  |  Tags: , , , , ,   |  Organizations: ,
December 11, 2012

Semiconductor roadmap gets fuzzier at IEDM

Semiconductor process options outlined at IEDM by Luc van den Hove of imec as industry faces hard choices and rising costs
December 4, 2012

FinFET tipsheet for IEDM

finFETs are vital to the next generation of CMOS processes from Intel, TSMC and others. How will process issues including bulk vs SOI substrates, density limitations, thickness control, and planar device integration affect their practical implementation?
October 11, 2012

Intel, TSMC finFETs to star at IEDM

Intel finFET family grows to support SoC use, as TSMC boosts p-channel performance with germanium
Article  |  Topics: Blog Topics, Commentary, Blog - EDA  |  Tags: , , , ,   |  Organizations: , ,

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