Device structures

TSMC 16nm finFET process and efforts to increase p-finFET mobility using germanium to be detailed at December's International Electron Devices Meeting.

finFETs are vital to the next generation of CMOS processes from Intel, TSMC and others. How will process issues including bulk vs SOI substrates, density limitations, thickness control, and planar device integration affect their practical implementation?

Intel finFET family grows to support SoC use, as TSMC boosts p-channel performance with germanium

The International Solid-State Circuits Conference (ISSCC) this year provided an opportunity to see how the team that was first to put a finFET or trigate-based process into action on a multi-million transistor design did it.