October 1, 2013
TSMC 16nm finFET process and efforts to increase p-finFET mobility using germanium to be detailed at December's International Electron Devices Meeting.
December 4, 2012
finFETs are vital to the next generation of CMOS processes from Intel, TSMC and others. How will process issues including bulk vs SOI substrates, density limitations, thickness control, and planar device integration affect their practical implementation?
October 11, 2012
Intel finFET family grows to support SoC use, as TSMC boosts p-channel performance with germanium
February 20, 2012
The International Solid-State Circuits Conference (ISSCC) this year provided an opportunity to see how the team that was first to put a finFET or trigate-based process into action on a multi-million transistor design did it.