IEDM 2012

The International Electron Device Meeting takes place in San Francisco the week of 10 December 2012 and will, among many other things, focus on challenges for finFET-based processes as well as the issues for 14nm processes and beyond.


May 5, 2013

IEDM2013 call for papers closing soon

It's time to act if you want your semiconductor device or process research to be considered for presentation at IEDM 2013 in Washington DC this December.
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December 11, 2012

FD-SOI vs finFETs mulled during IEDM

Can planar devices on fully depleted SOI resist the relentless rise of finFETs as the next device architecture of choice for the semiconductor industry? An evening panel at IEDM explored the trade-offs
December 11, 2012

Semiconductor roadmap gets fuzzier at IEDM

Semiconductor process options outlined at IEDM by Luc van den Hove of imec as industry faces hard choices and rising costs
December 10, 2012

Oxygen injection for go-faster 14nm transistors

Mears Technologies and UC Berkeley describe at IEDM 2012 how oxygen in a silicon superlattice could boost performance beyond strained silicon at 14nm.
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December 10, 2012

Germanium finFETs, TFETs and MEMS modelled at IEDM

The modelling track at IEDM 2012 showed how germanium could be used in 14nm finFETs. Other work focused on tunnel FETs and analyzing MEMS using Spice.
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December 4, 2012

FinFET tipsheet for IEDM

finFETs are vital to the next generation of CMOS processes from Intel, TSMC and others. How will process issues including bulk vs SOI substrates, density limitations, thickness control, and planar device integration affect their practical implementation?
October 25, 2012

Ambipolar FETs are an each-way bet

Ambipolar FETs, which can be n or p-type dependent on a control gate, could offer a new way to design circuits at 20nm and below.
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October 15, 2012

FinFETs face planar fightback at IEDM

Advanced SOI devices with hybrid channel materials may challenge the finFET's future dominance, says IBM
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October 11, 2012

Intel, TSMC finFETs to star at IEDM

Intel finFET family grows to support SoC use, as TSMC boosts p-channel performance with germanium
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