X-Fab to add 130nm SiGe with IHP deal
X-Fab is using IHP technology to add a 130nm silicon germanium process to its offering.
SiGe
CDNLive Boston to tackle mixed-signal design, host exhibit
Taking place in Chelmsford, MA on 27 August, the conference will feature user-authored papers, tutorials, a designer expo and keynotes from Cadence and IBM.
FD-SOI costs to match bulk by year end, says ST
STMicroelectronics pushes on with FDSOI despite dissolution of ST-Ericcson joint venture that provided the lead customer for the process.
FinFETs face planar fightback at IEDM
Advanced SOI devices with hybrid channel materials may challenge the finFET's future dominance, says IBM