EUV

EUV and fin optimization help build Samsung's upcoming 7nm process, the company discloses at the VLSI Technology Symposium.

Among the papers at this year's VLSI Symposia in Hawaii in June, Samsung will describe a 7nm CMOS process that uses EUV lithography to tighten up device features on minimum-pitch interconnects.

At the 62nd annual IEDM taking place in early December two of the leading groups in process development will take the wraps off their 7nm finFET technologies.

Directed self assembly techniques may offer similar benefits to EUV lithography, especially for DRAM makers, says SPIE conference paper

The Calibre vendor will have a strong technical presence at the leading lithography conference taking place in late February in San Jose.

IMEC and Cadence have taped out a test chip intended to explore key lithography and metal-interconnect issues that will face users of the forthcoming 5nm process node.

IBM, GlobalFoundries, Samsung and SUNY deserve kudos for manufacturing the first 7nm chip but the NREs involved still look frightening.

EUV may be getting most R&D cash but the world's biggest foundry says e-beam currently has the edge on defects and double patterning.

Panel discusses Moore's law scaling beyond the 14nm node to 5nm, where economic, device, interconnect, materials, lithography and design issues abound

IMEC's Rudy Lauwereins explained at DATE 2014 how 1D routing for self-aligned multiple patterning is likely to be inevitable even if EUV makes it into production fabs.