FD-SOI

STMicroelectronics pushes on with FDSOI despite dissolution of ST-Ericcson joint venture that provided the lead customer for the process.

GlobalFoundries and Samsung described how they are readying finFETs for production at CPTF 2013 and how the 28nm processes will have a long shelf life.

Can planar devices on fully depleted SOI resist the relentless rise of finFETs as the next device architecture of choice for the semiconductor industry? An evening panel at IEDM explored the trade-offs

Semiconductor process options outlined at IEDM by Luc van den Hove of imec as industry faces hard choices and rising costs

Mears Technologies and UC Berkeley describe at IEDM 2012 how oxygen in a silicon superlattice could boost performance beyond strained silicon at 14nm.

finFETs are vital to the next generation of CMOS processes from Intel, TSMC and others. How will process issues including bulk vs SOI substrates, density limitations, thickness control, and planar device integration affect their practical implementation?

STMicroelectronics offers 28nm process to smaller scale users through CMP and Soitec

A deal between GlobalFoundries and STMicroelectronics has answered the question as to where ICs based on an FD-SOI process can be made, and not just for ST.

What are the chances that FD SOI will become a mainstream process for future nodes?