October 22, 2018
CMOS moving to 3nm and DRAM going beyond 20nm scaling are two of the late papers at the upcoming IEDM and part of a larger examination of semiconductor trends.
June 13, 2012
MEMS relay-based devices offer the ultimate in subthreshold leakage: they don't have any. Design and technology advances are promising to overcome problems with reliability, design and speed, according to Tsu-Jae King Liu of UC Berkeley.