IEDM to examine scaling from multiple directions
CMOS moving to 3nm and DRAM going beyond 20nm scaling are two of the late papers at the upcoming IEDM and part of a larger examination of semiconductor trends.
steep-subthreshold devices
Low-power logic for steampunks
MEMS relay-based devices offer the ultimate in subthreshold leakage: they don't have any. Design and technology advances are promising to overcome problems with reliability, design and speed, according to Tsu-Jae King Liu of UC Berkeley.
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