University of Tokyo


July 20, 2023

Ferroelectric memory moves closer with VLSI experiments

Ferroelectric memory may be able to stage a comeback thanks to materials innovations as work presented at VLSI Symposium have shown, though there is still plenty to do.
June 1, 2022

Oxide DRAM gains traction at VLSI Symposium

VLSI Symposium 2022 will show the rapid development taking place in oxide-based replacements for traditional DRAM cells as well as the emerging area of memory-based low-power machine learning.

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