Ferroelectric memory moves closer with VLSI experiments
Ferroelectric memory may be able to stage a comeback thanks to materials innovations as work presented at VLSI Symposium have shown, though there is still plenty to do.
University of Tokyo
Oxide DRAM gains traction at VLSI Symposium
VLSI Symposium 2022 will show the rapid development taking place in oxide-based replacements for traditional DRAM cells as well as the emerging area of memory-based low-power machine learning.
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