MRAM


October 22, 2018

IEDM to examine scaling from multiple directions

CMOS moving to 3nm and DRAM going beyond 20nm scaling are two of the late papers at the upcoming IEDM and part of a larger examination of semiconductor trends.
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July 12, 2018

With RF, power and MRAM, FD-SOI finds its role

FD-SOI is gradually building up a presence as a technology not just for low-power but RF and power integration.
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June 18, 2018

Switch to orbit mode boosts MRAM on 300mm wafers

Imec will at this week’s VLSI Symposia describe how it fabricated a form of magnetic memory suitable for use as a non-volatile cache onto 300mm wafers using CMOS-compatible processes.
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September 21, 2017

GlobalFoundries adds 12nm finFET process

GlobalFoundries intends to offer a 12nm FinFET process as a stepping stone from its 14nm process.
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September 16, 2016

GlobalFoundries ports MRAM to 22nm FD-SOI

GlobalFoundries has introduced an embedded-MRAM option for its 22nm FD-SOI process: the 22FDX platform.
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March 11, 2015

Charting out the roadmap for FD-SOI

As plans crystallize to take FD-SOI down to 10nm, CEA-Leti argues that the technology can provide an alternative path to that of finFETs to get to 7nm processes and beyond.
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