FD-SOI is gradually building up a presence as a technology not just for low-power but RF and power integration.
Imec will at this week’s VLSI Symposia describe how it fabricated a form of magnetic memory suitable for use as a non-volatile cache onto 300mm wafers using CMOS-compatible processes.
GlobalFoundries intends to offer a 12nm FinFET process as a stepping stone from its 14nm process.
GlobalFoundries has introduced an embedded-MRAM option for its 22nm FD-SOI process: the 22FDX platform.
As plans crystallize to take FD-SOI down to 10nm, CEA-Leti argues that the technology can provide an alternative path to that of finFETs to get to 7nm processes and beyond.
View All Sponsors