GlobalFoundries ports MRAM to 22nm FD-SOI

GlobalFoundries has introduced an embedded magnetic memory (MRAM) option for its 22nm FD-SOI process: the 22FDX platform.

The MRAM module is designed to offer thousand-fold faster write speeds and endurance compared to the flash-based non-volatile memory options on comparable processes. The foundry claimed the 22FDX eMRAM will retain data through 260°C solder reflow – supporting the ability to program keys and configuration data into devices before PCB assembly – as well as industrial temperature operation.

GlobalFoundries said it plans to port the MRAM, which is suited to storing both code and working data, to other processes – both finFET and FD-SOI. Lower energy for writes should suit the memory to mobile SoCs.

“Emerging non-volatile memories are moving from the lab to the fab,” said Thomas Coughlin, president of Coughlin Associates. “GlobalFoundries’ 22FDX eMRAM will offer a major advancement in SoC capabilities, by leveraging the key performance attributes of embedded MRAM. Designers of battery powered IoT devices, automotive MCUs and SoCs and SSD storage controllers will certainly want to take advantage of this versatile embedded NVM technology.”

The introduction of the embedded MRAM module is a result of the company’s multi-year partnership with MRAM pioneer Everspin Technologies. The partnership delivered the world’s highest density spin-torque MRAM in August, with a 256Mbit DDR3 device based on a perpendicular magnetic tunnel junction.

The foundry says the module will be available for customer prototyping in 2017, with volume production in 2018.