IP

August 28, 2018

GlobalFoundries stops 7nm work to focus on existing processes

GlobalFoundries has decided to put development of its 7nm process on the backburner and focus on its existing finFET and FD-SOI processes.
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August 3, 2018

MPW service arrives for RRAM

Research institute Leti and low-volume wafer service CMP are cooperating on a project to let fabless chipmakers explore the use of non-volatile resistive RAMs in their designs.
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July 30, 2018

56G Ethernet IP to enable leaf-spine hyperscale data centres

Faster PHYs needed to shift vast amounts of data around giant data centres.
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July 30, 2018

Synopsys catalogues AI IP

The rapid growth of interest in machine learning and artificial intelligence has prompted Synopsys to bring all its AI IP together in a microsite and brochure.
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July 27, 2018

Verification engineers embrace emulation for the shift left

In a panel session at June's DAC, Synopsys customers talked about some of the ways they make verification more efficient and bring technologies such as formal, emulation, and simulation together.
July 16, 2018

Embedded FPGAs start to take hold in SoC

The embedded FPGA is beginning to find a market, with communications leading the way but machine learning likely to drive further adoption.
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July 12, 2018

With RF, power and MRAM, FD-SOI finds its role

FD-SOI is gradually building up a presence as a technology not just for low-power but RF and power integration.
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July 5, 2018

Cloud makes hardware acceleration more accessible

After the moves by Cadence and Mentor, emulation in the cloud may only be the start of providing verification acceleration as a service.
July 2, 2018

Tools suppliers back version 1.0 of portable-stimulus standard

Accellera has published the first release of the Portable Test and Stimulus Standard (PSS), with tools suppliers following up with software support.
June 25, 2018

Node-variant FinFET tweaks try to improve cost, performance

Foundries have taken aim at standard-cell track height and design-rule tweaks to try to improve the area efficiency and performance of derivative finFET processes.

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