National Taiwan University

July 20, 2023

Ferroelectric memory moves closer with VLSI experiments

Ferroelectric memory may be able to stage a comeback thanks to materials innovations as work presented at VLSI Symposium have shown, though there is still plenty to do.

Article | Topics: Blog - IP | Tags: BEOL, cryogenic electronics, ferroelectric memory, flash, novel memory | Organizations: AIST, Georgia Tech, KAIST, National Taiwan University, University of Tokyo