IEDM

December 4, 2012

FinFET tipsheet for IEDM

finFETs are vital to the next generation of CMOS processes from Intel, TSMC and others. How will process issues including bulk vs SOI substrates, density limitations, thickness control, and planar device integration affect their practical implementation?
October 25, 2012

Ambipolar FETs are an each-way bet

Ambipolar FETs, which can be n or p-type dependent on a control gate, could offer a new way to design circuits at 20nm and below.
Article  |  Topics: Blog Topics, Commentary, Conferences  |  Tags: ,   |  Organizations: ,
October 15, 2012

FinFETs face planar fightback at IEDM

Advanced SOI devices with hybrid channel materials may challenge the finFET's future dominance, says IBM
Article  |  Topics: Commentary, Conferences, Blog - EDA  |  Tags: , , , , , ,   |  Organizations: ,
October 11, 2012

Intel, TSMC finFETs to star at IEDM

Intel finFET family grows to support SoC use, as TSMC boosts p-channel performance with germanium
Article  |  Topics: Blog Topics, Commentary, Blog - EDA  |  Tags: , , , ,   |  Organizations: , ,

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