IEDM

The modelling track at IEDM 2012 showed how germanium could be used in 14nm finFETs. Other work focused on tunnel FETs and analyzing MEMS using Spice.

finFETs are vital to the next generation of CMOS processes from Intel, TSMC and others. How will process issues including bulk vs SOI substrates, density limitations, thickness control, and planar device integration affect their practical implementation?

Ambipolar FETs, which can be n or p-type dependent on a control gate, could offer a new way to design circuits at 20nm and below.

Advanced SOI devices with hybrid channel materials may challenge the finFET's future dominance, says IBM

Intel finFET family grows to support SoC use, as TSMC boosts p-channel performance with germanium