DFM

Lithography is only just beginning to play a role in cell IP selection but early analysis already matters.

It is not just a choice between EUV and multiple patterning for future nodes, but even between varieties of multi-mask technologies. How will you decide?

A number of effects have led to a dramatic increase in interconnect resistance in the sub-32nm process nodes that demands the use of smarter routing.

Increasingly complex design rules in 14nm and 16nm make it harder to connect local routing to the inputs and outputs (pins) of standard cells.

If EUV is further delayed until 8nm, the industry has to explore other options for patterning, and the effects they will have on the DFM flow.

Extracting finFET parasitics means a shift to 3D models, field solvers for greater accuracy, and MCMM techniques.

The costs of advanced lithography techniques at 1xnm, and the yield and reliability risks from the resultant process variation, will stop many companies getting the typical economic advantages of scaling.

PGA has been IC-centric for mainstream 2D configurations. It must become system-centric for 2.5D and 3D systems.

Electrically aware layout tools provide a more efficient alternative to time-consuming rip-up-and-retry practices in mixed-signal nanometer IC design.

New layout-dependent effects (LDEs) arise at each process node. This methodology updates LDE parameters and uses on-the-fly simulation for early detection.