finFETs are vital to the next generation of CMOS processes from Intel, TSMC and others. How will process issues including bulk vs SOI substrates, density limitations, thickness control, and planar device integration affect their practical implementation?
CSR used a customized approach to automated dummy fill layout for AMS to address layer density and device matching issues in standard flows aimed at digital SoCs.
Manufacturability, routing, library design and more - it all needs rethinking at 20nm, writes Tong Gao of Synopsys.
Finding and fixing double patterning problems in 20nm designs
A look at the way in which key tools, in IC implementation, modeling and extraction, and physical verification, are developing in response to the challenges of 20nm design
Antun Domic of Synopsys tackles the three key challenges of 20nm processes: design complexity; the physics of lithography; and economics.
A guide to emerging 3D integration techniques for ICs, including a look at various approaches, and some of the tools and standards issues involved.
How Cadence, Intel and Xuropa accelerated the semiconductor design process by squeezing 15% more capacity out of a virtualized server farm
Using a new design-partitioning tool and stacked-silicon interconnect FPGA to develop an ASIC prototyping platform that can be reprogrammed several times a day.
There's still debate over certain aspects of the 20nm node, but the main challenges are already being addressed. Expect to see foundries and vendors mark their turf at DAC.
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