X-Fab introduces BCD-on-SOI at 110nm
X-Fab Silicon Foundries claims to be the first with a foundry offering for 110nm BCD-on-SOI technology, a process that is intended to reflects the growing need for greater digital integration and processing capabilities in power-control and analogue applications, particularly for automotive products.
With the moving to a smaller geometry, the XT011 process effectively doubles the standard-cell library density of its existing XT018 180nm BCD-on-SOI platform. SONOS embedded-flash memory also takes up 35 per cent less space.
For power applications, the new process improve on-resistance (Rdson by 25 over the XT018 node and the company has also addressed thermal performance to help handle applications with higher current requirements. The foundry claims the process can support the delivery of AEC-Q100 Grade 0 compliant products. Circuits can cover an operating temperature range of -40°C to 175°C and the process offers protection against bipolar latchup. The process design kit (PDK) X-Xab includes cells for SRAM, ROM, SONOS-based flash and embedded EEPROM.
Devices will be fabricated at X-Fab’s facility in Corbeil-Essonnes, near Paris. Volume production will commence in the second half of 2023.
