Selective CVD growth of germanium-tin: a new approach for implementing stress in germanium-based MOSFETs
Belgian research institute Imec describes, for the first time, the selective chemical vapor deposition (CVD) of germanium-tin (GeSn) in a production-like environment using commercially available Ge and Sn precursors. The resulting GeSn layers with 8% Sn are defect free, fully strained and thermally stable for temperatures up to 500°C. The technique is used to implement [...]
