2015 – The year in review
Dr Walden Rhines, chairman and CEO of Mentor Graphics, opens a two-part analysis by looking back at the dominant design and business trends in 2015.
FD-SOI
One BSIM to rule them all
A change in the way the core compact models are developed has accelerated their development and, for the first time, allowed the models to be used not just for circuit simulation but to help guide process evolution as chipmakers play not only with materials but the shape of finFETs.
Physical verification of finFET and FD-SOI devices
A look at some of the design and physical verification challenges of working with finFET and FD-SOI devices, including their impact on layout, DRC and LVS.
FinFET tipsheet for IEDM
finFETs are vital to the next generation of CMOS processes from Intel, TSMC and others. How will process issues including bulk vs SOI substrates, density limitations, thickness control, and planar device integration affect their practical implementation?
Parting of the ways
Intel says ‘trigate’—finFET to others—but depleted silicon-on-insulator also has its post 22nm supporters. Chris Edwards reports on the debate at 2011’s Semicon West.