process shrink

June 1, 2009

Computational scaling: implications for design

The article presents the context for the use of computation scaling (CS) to eke out more from existing lithography tools until next-generation techniques are finally introduced. It discusses the critical elements in the CS ecosystem developed by IBM and partners to overcome roadblocks to optical scaling that demand the use of non-traditional techniques for the […]

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May 1, 2009

Access all areas

Since 130nm, you have either had an innovative approach to low-power design, or you have not had a business. From that node onwards, low-power requirements began to match raw performance in driving the R&D agenda. Where the cutting edge was once defined by communications infrastructure and programmable logic, consumer electronics (CE) started to become ever […]

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May 1, 2009

The art of low-power physical design

The architectures that underpin today’s traditional place-and-route tools are showing their age, largely because their static timing analysis engines cannot handle more than two mode/corner scenarios. Thus limited, the software struggles to effectively implement low-power design techniques beyond such established concepts as clock gating and multiple threshold voltages. Designers run into difficulties when trying to […]

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March 1, 2009

Chemical mechanical polish: the enabling technology

Chemical mechanical polishing (CMP) has traditionally been considered an enabling technology. It was first used in the early 1990s for BEOL metallization to replanarize the wafer substrate thus enabling advanced lithography, which was becoming ever more sensitive to wafer surface topography. Subsequent uses of CMP included density scaling via shallow trench isolation and interconnect formation […]

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June 1, 2008

Migration of the Cell Broadband Engine to 45nm SOI

The paper describes some of the main challenges in the latest process shrink for the Cell Broadband Engine, developed jointly by IBM, Sony and Toshiba. The authors show how the move from a 65nm to a 45nm SOI process was achieved by concentrating on four primary goals: automating the migration; setting a 30% power reduction […]

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