Flash Memory Summit: Memblaze demos Toshiba ULL NVM technology

By TDF Editor |  No Comments  |  Posted: August 5, 2019
Topics/Categories: Conferences, Blog - Embedded, - Product  |  Tags: , , ,  | Organizations: ,

Chinese memory module specialist Memblaze will release details of a new non-volatile SSD based on Toshiba’s XL-Flash technology at this week’s Flash Memory Summit in Santa Clara, California.

The company will also discuss the application of its Enhanced Namespace Management system during the event at the Santa Clara Convention Center.

XL-Flash is optimized for ultra-low latency (one tenth that of standard 3D TLC Nand) at an attractive price point, according to Memblaze senior vice president Taile Zhang. The company’s new PBlaze5 X26 has 4K random write latency that is expected to be under 10us and 4K mixed read-write latency potentially as low as 26us on average. The latency of the final product, due for formal launch in 2020, is expected to reach below 20us.

The company’s Namespace technology achieves efficiencies by divideing DRAM, NAND and other media into different resource pools and providing application services through namespaces for MySQL databases. The session on the technology will take place during the summit on Thursday (August 8) at 8.30AM.

The Flash Memory Summit run from August 6-8. Memblaze is exhibiting on Booth #614.


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