Conferences

March 19, 2013

DATE: Dark clouds gather over 3D integration, panelist tells conference

The chip industry faces problems as foundries and the packaging industry compete over 3D technologies. If resolved, it could mean a new dawn in ASIC design.
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March 19, 2013

FD-SOI costs to match bulk by year end, says ST

STMicroelectronics pushes on with FDSOI despite dissolution of ST-Ericcson joint venture that provided the lead customer for the process.
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February 25, 2013

DVCon: UPF and CPF harmony in low power is only a foundation

As DVCon begins, we interview Cadence's Qi Wang, who has led its efforts to converge the Common Power Format with its rival as the IEEE1801 standard is revamped.
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February 20, 2013

ISSCC 2013: IBM adds digital logic synthesis methodology for System z

The paper on the 32nm upgrade to Big Blue's family of server chips also detailed how the company is tackling BTI.
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February 19, 2013

ISSCC 2013: AMD on how to make a Star Trek holodeck… eventually

Keynoter Lisa Su spun a whimsical idea to serious intent as AMD looks to promote its model for heterogeneous architectures
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December 13, 2012

3D-IC integration prospects improving, say IEDM researchers

3D-IC integration techniques such as the use of TSVs, die stacking and interposers are unlikely to limit performance, according to research from TSMC and IBM
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December 11, 2012

FD-SOI vs finFETs mulled during IEDM

Can planar devices on fully depleted SOI resist the relentless rise of finFETs as the next device architecture of choice for the semiconductor industry? An evening panel at IEDM explored the trade-offs
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December 11, 2012

Semiconductor roadmap gets fuzzier at IEDM

Semiconductor process options outlined at IEDM by Luc van den Hove of imec as industry faces hard choices and rising costs
December 4, 2012

IPSoC: Tabula aims for 22nm white-label parts

Tabula expects to have 22nm FPGAs next year and is trying to recruit IP developers to an 'app store' for data-center hardware.
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December 4, 2012

FinFET tipsheet for IEDM

finFETs are vital to the next generation of CMOS processes from Intel, TSMC and others. How will process issues including bulk vs SOI substrates, density limitations, thickness control, and planar device integration affect their practical implementation?

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