The 10nm generation is the follow-on process to the 14nm/16nm node and will provide a choice of either finFET or planar FD-SOI architectures. But the likely absence of EUV will increase costs.
The 14nm and 16nm processes cover a range of technologies and are designed to succeed the 20nm generation. They bring with them a number of design challenges.
The encryption chain for today's highly collaborative designs needs to be managed with care.
Lithography is only just beginning to play a role in cell IP selection but early analysis already matters.
Using a physically aware flow to ensure that fixing one ECO doesn't introduce another during sign off.
Advanced tools are being applied to established nodes to produce advanced designs for volume markets.
The number of scenarios needed for MCMM timing analysis has skyrocketed. IC implementation calls for a concurrent approach to deal with the issue.
Advanced design isn’t restricted to emerging process nodes any more. Designers are using the latest tools to produce advanced designs on established nodes.
It is not just a choice between EUV and multiple patterning for future nodes, but even between varieties of multi-mask technologies. How will you decide?
A number of effects have led to a dramatic increase in interconnect resistance in the sub-32nm process nodes that demands the use of smarter routing.
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