DFM

June 1, 2011

The Evolution of Patterning Process Models in Computational Lithography

Thirty five years have passed since the first lithography process models were presented, and since that time there has been remarkable progress in the predictive power, performance, and applicability of these models in addressing many different challenges within the semiconductor industry. The impact has been profound, and this paper will attempt to highlight some of […]

Whitepaper  |  Tags: , ,
May 31, 2011

Impact of Illumination on Model-Based SRAF Placement for Contact Patterning

Sub-Resolution Assist Features (SRAFs) have been used extensively to improve the process latitude for isolated and semi-isolated features in conjunction with off-axis illumination. These SRAFs have typically been inserted based upon rules which assign a global SRAF size and proximity to target shapes. Additional rules govern the relationship of assist features to one another, and […]

Whitepaper  |  Tags: , ,
May 31, 2011

LENS (Lithography Enhancement Towards Nano Scale) a European Project to Support Double Exposure and Double Patterning Technology Development

In 2009 a new European initiative on Double Patterning and Double Exposure lithography process development was started in the framework of the ENIAC Joint Undertaking. The project, named LENS (Lithography Enhancement Towards Nano Scale), involves twelve companies from five different European Countries (Italy, Netherlands, France, Belgium Spain) and includes: IC makers (Numonyx and STMicroelectronics), a […]

Whitepaper  |  Tags: , ,
May 31, 2011

Selective Inverse Lithography Methodology

Selective Inverse Lithography (ILT) approach recently introduced by authors [1] has proven to be advantageous for extending life-span of lower-NA 193nm exposure tools to achieve satisfactory 65nm contact layer patterning. We intend to find an alternative solution without the need for higher NA tools and advanced light source optimization. In this paper we explore possible […]

Whitepaper  |  Tags: , ,
May 31, 2011

Full Chip Correction of EUV Design

Extreme Ultraviolet Lithography (EUVL) is currently the most promising technology for advanced manufacturing nodes: it recently demonstrated the feasibility of 32nm and 22nm node devices, and pre-production tools are expected to be delivered by 2010. Generally speaking, EUVL is less in need of Optical Proximity Correction (OPC) as compared to 193nm lithography, and the device […]

Whitepaper  |  Tags: , ,
May 31, 2011

The Roadmap to LFD Value: Quantifying a Return on Investment in Calibre LFD

By the time a serious lithographic problem is identified at the fab, it is too late in the design process to make a simple layout change, resulting in a significant delay of the tapeout, and consequently chip delivery. To diminish the risk of sensitive layout structures, and avoid or reduce design delays, designers need the […]

May 31, 2011

Demonstrating the Benefits of Source-Mask Optimization and Enabling Technologies through Experiment and Simulations

In recent years the potential of Source-Mask Optimization (SMO) as an enabling technology for 22nm-and-beyond lithography has been explored and documented in the literature.1-5 It has been shown that intensive optimization of the fundamental degrees of freedom in the optical system allows for the creation of non-intuitive solutions in both the mask and the source, […]

Whitepaper  |  Tags: , ,
May 31, 2011

Deployment of OASIS in the Semiconductor Industry – Status, Dependencies and Outlook

The OASIS working group was first initiated in 2001, published the new format in March 2004, which was ratified as an official SEMI standard in September 2005. A follow-on initiative expanded the new standard to cover the needs of the mask manufacturing equipment sector with a derived standard called OASIS.MASK (P44) that was released in […]

Whitepaper  |  Tags: , ,
May 31, 2011

Computational Lithography: Enabling 12 Technology Nodes in 12 years

Computational lithography has become an integral part of design since the 130nm process node. New techniques continue to be developed to extend the steady node shrink year after year.

Whitepaper  |  Tags: , ,
May 31, 2011

Generalization of Shot Definition for Variable Shaped E-Beam Machines for Write Time Reduction

By adding a second deflector-aperture stage to the electron beam column of a vector shaped mask writer in which the aperture has the shape of a cross, one gains the ability to print a parameterized “L-shaped” exposure. This is the most modest generalization of the shot shape in such machines that retains the current paradigm […]

Whitepaper  |  Tags: , ,

PLATINUM SPONSORS

Synopsys Cadence Design Systems Mentor - A Siemens Business
View All Sponsors