Computational lithography has become an integral part of design since the 130nm process node. New techniques continue to be developed to extend the steady node shrink year after year.
By adding a second deflector-aperture stage to the electron beam column of a vector shaped mask writer in which the aperture has the shape of a cross, one gains the ability to print a parameterized “L-shaped” exposure. This is the most modest generalization of the shot shape in such machines that retains the current paradigm […]
With rapidly shrinking feature sizes, full chip robust Optical Proximity Correction (OPC) will take longer due to the increasing pattern density. Furthermore, to achieve a perfect OPC control recipe becomes more difficult. The critical dimension of the design features is smaller than the exposure wavelength, and there is only limited room for the OPC correction. […]
One of the major problems in the RET flow is OPC recipe creation. The existence of numerous parameters to tune and the interdependence between them complicates the process of recipe optimization and makes it very tedious. There is usually no standard methodology to choose the initial values for the recipe settings or to determine stable […]
During optical proximity correction (OPC), layout edges or fragments are migrated to proper positions in order to minimize edge placement error (EPE). During this fragment migration, several factors other than EPE are a part of the cost function for optimal fragment displacement. Several factors are devised in favor of OPC stability, which can accommodate room […]
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