SADP

May 26, 2014
Unidirectionally routed M1 using SADP (Source: CMU/IBM)

Triple patterning and self-aligned double patterning (SADP)

In the absence of EUV lithography, the primary option for manufacturing on a 10nm process is to extend double patterning. But the options each have issues.
January 20, 2014
Jean-Marie Brunet is the Product Marketing Director for DFM at Mentor Graphics

Patterning choices loom for 10nm and beyond

It is not just a choice between EUV and multiple patterning for future nodes, but even between varieties of multi-mask technologies. How will you decide?
December 3, 2013
Dr David M Fried is Chief Technology Officer - Semiconductor at Coventor, responsible for the company’s strategic direction and implementation of its SEMulator3D Virtual Fabrication Platform.

Lithography challenges threaten the cost benefits of IC scaling

The costs of advanced lithography techniques at 1xnm, and the yield and reliability risks from the resultant process variation, will stop many companies getting the typical economic advantages of scaling.
Expert Insight  |  Topics: EDA - DFM  |  Tags: , , , , , , , , ,   |  Organizations:
January 16, 2012

Double patterning for sub-28nm ICs

Double patterning provides an alternative to using EUV lithography – making it possible to implement ICs on sub-28nm processes.
Guide  |  Topics: EDA - DFM  |  Tags: , , ,

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