MOSFETs

August 25, 2011

Selective CVD growth of germanium-tin: a new approach for implementing stress in germanium-based MOSFETs

Belgian research institute Imec describes, for the first time, the selective chemical vapor deposition (CVD) of germanium-tin (GeSn) in a production-like environment using commercially available Ge and Sn precursors. The resulting GeSn layers with 8% Sn are defect free, fully strained and thermally stable for temperatures up to 500°C. The technique is used to implement [...]
Article  |  Topics: EDA - DFM, - EDA Topics  |  Tags: , , , ,

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