In sessions at the 2015 Design Automation Conference, engineers who had worked on finFET-oriented projects revealed how the technology has changed their design practices and where others may want to think twice about making the move.
The 14nm and 16nm processes cover a range of technologies and are designed to succeed the 20nm generation. They bring with them a number of design challenges.
Electrically aware layout tools provide a more efficient alternative to time-consuming rip-up-and-retry practices in mixed-signal nanometer IC design.
New layout-dependent effects (LDEs) arise at each process node. This methodology updates LDE parameters and uses on-the-fly simulation for early detection.
The arrival of the 20nm and finFET-based 14nm and 16nm processes bring with them challenges for custom IC design. These are the five key areas and a methodology that can address them.
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