interconnect resistance

July 23, 2014

20nm

The 20nm node can offer power, performance and area advantages, but making these gains takes a deep understanding of the interactions between process and design.
May 19, 2014

10nm processes

The 10nm generation is the follow-on process to the 14nm/16nm node and will provide a choice of either finFET or planar FD-SOI architectures. But the likely absence of EUV will increase costs.
May 19, 2014

14nm/16nm processes

The 14nm and 16nm processes cover a range of technologies and are designed to succeed the 20nm generation. They bring with them a number of design challenges.
January 13, 2014
Interconnect resistance has increased since the 40nm node

Interconnect resistance

A number of effects have led to a dramatic increase in interconnect resistance in the sub-32nm process nodes that demands the use of smarter routing.
November 6, 2013

Improving performance through better delay estimation of sub-32nm interconnects

Better delay estimation of sub-32nm interconnects, in which resistivity varies up to 100x between layers, helps Cavium improve overall performance and get ready for even denser processes

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