Intel

IEDM late last year showed how MRAM is being prepared for both FD-SOI and advanced finFET nodes.

Different forms of heterogeneous integration take center stage at the IEEE International Electron Device Meeting (IEDM) in December this year.

Non-volatile alternatives to flash are finally moving out of the lab as Applied Materials launches production tools and Arm starts pushing MRAM.

ES Design West aims to help integrate the supply chain but also has plenty of engineering content aimed at low power, security, embedded and more.

The US Quantum Economic Development Consortium is looking to stimulate a supply chain and technology infrastructure for quantum computing, with more about its efforts due to come out in the next few days.

Developing a security assurance standard for IP faces numerous problems but Accellera working-group members are trying to find an answer.

The formal specialist is extending its line for Intel FPGAs that target areas such as AI/ML and HPC, and building out a RISC-V suite focused on ISA compliance.

Embedded magnetic RAM is emerging as a contender for on-chip memory not just from a density standpoint but from that of power.

CMOS moving to 3nm and DRAM going beyond 20nm scaling are two of the late papers at the upcoming IEDM and part of a larger examination of semiconductor trends.

Researchers from the UC Berkeley and Intel teamed up to develop an energy-tuneable RF front-end on a digital finFET process with no need for analog process options.