Intel and GlobalFoundries will talk about their post-14nm finFET-based processes at December's IEDM.
IMEC has claimed at IEDM to have implemented for the first time the CMOS integration of vertically stacked nanowire transistors.
Simulation shows 7nm process will need tighter variability control than expected, and possibly accommodation for asymmetric variability
IMEC and Cadence have taped out a test chip intended to explore key lithography and metal-interconnect issues that will face users of the forthcoming 5nm process node.
Intel 14nm finFET SoC process is among the highlights of the 2015 VLSI Symposia alongside research that looks at the integration of III-V and 2D materials for future processes.
Process development alliance will enable Imec to experiment on 10 and 7nm processes in the computer before moving to the fab
EUV may be getting most R&D cash but the world's biggest foundry says e-beam currently has the edge on defects and double patterning.
IMEC's Rudy Lauwereins explained at DATE 2014 how 1D routing for self-aligned multiple patterning is likely to be inevitable even if EUV makes it into production fabs.
FinFETs for 7nm and below processes will be able to integrate high-mobility III-V materials despite being built on silicon processes, thanks to recent work by imec.
Four of the European centers for electronics research and business development have set up a project to try to create a virtual “silicon cluster” that aims ultimately to build a worldwide development network for energy-efficient systems.
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