Design to Silicon
Selective CVD growth of germanium-tin: a new approach for implementing stress in germanium-based MOSFETs
Quantifying returns on litho-friendly design
Foundry overcapacity – yes, it could happen
DRC+: a pattern-based approach to physical verification
SRAF Enhancement using Inverse Lithography for 32 nm Hole Patterning and Beyond
At 32 nm node and beyond, one of the most critical processes is the holes patterning due to the Depth of Focus (DOF) that becomes rapidly limited. Thus the use of Sub Resolution Assist Features (SRAF) becomes mandatory to keep DOF at a sufficient level through pitch. SRAF are generally generated using Rule Based OPC [...]
Automated DRC Waiver Management (or, How I Learned to Stop Worrying About IP Waivers and Love Calibre Auto-Waiver)
This paper explains the Calibre Auto-Waiver product, and discusses how the auto-waiver process significantly reduces the time and risks associated with implementing third-party IP. Integration of third-party intellectual property (IP) into integrated circuit (IC) designs has always been a potential time trap for IC designers. IP design rule violations that were waived by the foundry [...]
An Innovative Method to Automate the Waiver of IP-Level DRC Violations
Intellectual property (IP) blocks often contain known design rule checking errors that have been “waived” by the foundry, meaning they acknowledge the error as a design rule violation, but do not consider it to be a critical yield-limiting defect. Because this waiver information is not conveyed in any consistent manner with the IP, waived IP [...]
The Evolution of Patterning Process Models in Computational Lithography
Thirty five years have passed since the first lithography process models were presented, and since that time there has been remarkable progress in the predictive power, performance, and applicability of these models in addressing many different challenges within the semiconductor industry. The impact has been profound, and this paper will attempt to highlight some of [...]
Impact of Illumination on Model-Based SRAF Placement for Contact Patterning
Sub-Resolution Assist Features (SRAFs) have been used extensively to improve the process latitude for isolated and semi-isolated features in conjunction with off-axis illumination. These SRAFs have typically been inserted based upon rules which assign a global SRAF size and proximity to target shapes. Additional rules govern the relationship of assist features to one another, and [...]
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