At the 62nd annual IEDM taking place in early December two of the leading groups in process development will take the wraps off their 7nm finFET technologies.
STMicroelectronics, Samsung, GSI Technology and Synopsys talk about the challenges of doing AMS design on finFET processes.
DTCO work by GlobalFoundries and Qualcomm reported at VLSI Symposia shows the need to minimize fin counts in future finFET processes.
ARM says it has received test chips designed to check how well an SoC built around a 64bit multicore Cortex v8-A processor complex would work TSMC's upcoming 10nm FinFET process technology.
But project lead Chenming Hu, 'finFET's father', has also highlighted important changes in the funding landscape for university research.
Synopsys is updating its custom design tools to make working with finFET based processes easier.
Flow exploration helps designers establish best approach to advanced network processor implementation on Samsung finFET process
Collaboration between ARM, TSMC and Synopsys reveals challenges of 10nm finFET design flows.
Rapid virtual prototyping and a metal stack that's more designer friendly are two of the ways in which Samsung aims to build up foundry market share for its 14nm and 10nm finFET processes.
HiSilicon claims close collaboration with foundry and EDA tools partners helped speed up plans to tape out the first 16nm finFET-based design through TSMC.
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