Samsung Electronics expects to increase savings on die area in the shift from its 10nm to 7nm node by applying both EUV for critical layers and several layout-focused process changes.
Despite the intense R&D going into storage-class and other novel forms of non-volatile memories, flash is set to continue as the bulk memory of choice, Micron executive claims in VLSI Symposia keynote.
New flow enables high-performance, high-integration designs.
Cadence and Imec have worked together on a project to tape out a test chip to explore manufacturing and design-rule options for the interconnect on future 3nm processes.
Innovation and advances in EUV and OPC lead Mentor's offerings at SPIE in San Jose later this month.
EUV and fin optimization help build Samsung's upcoming 7nm process, the company discloses at the VLSI Technology Symposium.
Among the papers at this year's VLSI Symposia in Hawaii in June, Samsung will describe a 7nm CMOS process that uses EUV lithography to tighten up device features on minimum-pitch interconnects.
At the 62nd annual IEDM taking place in early December two of the leading groups in process development will take the wraps off their 7nm finFET technologies.
Directed self assembly techniques may offer similar benefits to EUV lithography, especially for DRAM makers, says SPIE conference paper
The Calibre vendor will have a strong technical presence at the leading lithography conference taking place in late February in San Jose.
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